Multilayer hexamethyldisiloxane film as bottom antireflective coating for ArF lithography
Multilayer hexamethyldisiloxane film as bottom antireflective coating for ArF lithography
复制标题
多层六甲基二硅氧烷薄膜作为 ArF 光刻底部抗反射涂层
DOI：
10.1116/1.591062
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发表时间：
1999
影响因子：
1.4
通讯作者：
H. L. Chen
中科院分区：
文献类型：
--
作者：
Lon A. Wang;H. L. Chen
提出了一种新的用于ArF光刻的六甲基二硅氧烷（HMDSO）多层底抗反射膜（BARC）。通过改变电子回旋共振等离子体增强化学气相沉积工艺中氧气与HMDSO的气体流速比，可以调节每层所需的光学常数，并且可以在一个步骤中完成沉积而无需改变其他材料。通过在Al/Si和硅晶体衬底上添加这样的多层BARC，所测量的摆动效应被示出显著降低。讨论了多层BARC应用于各种高反射基板的能力。此外，多层BARC被示出为能够提供比单层BARC更大的厚度控制公差。
A new multilayer bottom antireflective coating (BARC) layer composed of hexamethyldisiloxane (HMDSO) film stack is demonstrated for ArF lithography. The required optical constant of each layer can be tuned by varying the gas flow rate ratio of oxygen to HMDSO in an electron cyclotron resonance plasma enhanced chemical vapor deposition process, and the deposition can be completed in one step without changing to other materials. The measured swing effect is shown significantly reduced by adding such a multilayer BARC on both Al/Si and silicon crystal substrates. The capability of applying the multilayer BARC to various highly reflective substrates is discussed. Additionally, the multilayer BARC is shown to be capable of providing larger thickness-controlled tolerances than a single-layer BARC.