Interaction-Driven Filling-Induced Metal-Insulator Transitions in 2D Moire Lattices
Interaction-Driven Filling-Induced Metal-Insulator Transitions in 2D Moire Lattices
复制标题
DOI：
10.1103/physrevlett.127.096802
复制
发表时间：
2021-08-24
影响因子：
8.6
通讯作者：
Das Sarma, Sankar
中科院分区：
文献类型：
--
作者：
Pan, Haining;Das Sarma, Sankar
使用一个现实的扭曲WSe 2材料的能带结构，我们开发了一个理论的相互作用驱动的相关绝缘体进行金属过渡，通过调整的填充因子周围相称的分数填充的莫尔晶胞在二维蜂窝晶格，专注于占主导地位的半填充莫特绝缘状态，它存在于长距离和短距离的相互作用。我们发现金属状态稍微远离半填充，最近已经观察到的实验。我们讨论的稳定性和所产生的绝缘和金属相的磁性能，并评论他们的实验签名。我们还讨论了在有理分数填充下相关绝缘体态的性质。
Using a realistic band structure for twisted WSe2 materials, we develop a theory for the interaction-driven correlated insulators to conducting metals transitions through the tuning of the filling factor around commensurate fractional fillings of the moire unit cell in the 2D honeycomb lattice, focusing on the dominant half-filled Mott insulating state, which exists for both long- and short-range interactions. We find metallic states slightly away from half-filling, as have recently been observed experimentally. We discuss the stabilities and the magnetic properties of the resulting insulating and metallic phases, and comment on their experimental signatures. We also discuss the nature of the correlated insulator states at the rational fractional fillings.