Investigation of radio-photoluminescence properties in Sm-doped Al4SiO8 single crystals
Investigation of radio-photoluminescence properties in Sm-doped Al4SiO8 single crystals
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Sm 掺杂 Al4SiO8 单晶射电光致发光特性的研究
DOI：
10.1016/j.jlumin.2023.119698
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发表时间：
2023
影响因子：
3.6
通讯作者：
Yanagida Takayuki
中科院分区：
文献类型：
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作者：
Ichiba Kensei;Okada Go;Takebuchi Yuma;Kato Takumi;Shiratori Daiki;Nakauchi Daisuke;Kawaguchi Noriaki;Yanagida Takayuki
本文报道了钐掺杂al4sio8单晶作为一种新型RPL材料的射电光致发光特性。采用浮区法合成了掺杂sm的al4sio8单晶。在PL发射光谱中，x射线照射前出现了Sm3+离子4f-4f跃迁和Cr3+离子2je - 4a2跃迁的发射峰，照射后出现Sm2+离子4f-4f跃迁和Sm3+离子4f-4f跃迁的发射峰。RPL剂量响应函数显示，2.0% sm掺杂样品在1 ~ 10 Gy范围内呈线性响应，其余样品在10 ~ 10 Gy范围内呈线性响应。在500℃热处理10 min后，新发射中心的Sm2+离子完全消失。
We report radio-photoluminescence (RPL) properties of Sm-doped Al4SiO8single crystals as a new RPL material. The Sm-doped Al4SiO8single crystals were synthesized by the floating zone method. In PL emission spectra, the emission peaks due to the 4f-4f transitions of Sm3+ions and2EJ–4A2transitions of Cr3+ions were observed before X-ray irradiation, and the ones due to the 4f-4f transitions of Sm2+appeared as well as Sm3+after X-ray irradiation. The RPL dose response functions showed linear response from 1 mGy to 10 Gy for the 2.0% Sm-doped sample and from 10 mGy to 10 Gy for the others. Sm2+ions of the new emission center completely disappeared by heat treatment at 500 °C for 10 min.