Voltage impulse induced bistable magnetization switching in multiferroic heterostructures
Voltage impulse induced bistable magnetization switching in multiferroic heterostructures
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DOI：
10.1063/1.3698363
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发表时间：
2012-03-26
影响因子：
4
通讯作者：
Sun, N. X.
中科院分区：
文献类型：
--
作者：
Nan, T. X.;Zhou, Z. Y.;Sun, N. X.
本文报道了FeGaB/PZT多铁异质结构在室温下电压脉冲诱导的可逆磁化反转。这是通过铁电PZT和铁磁FeGaB层之间的应变介导的磁电耦合来实现的。通过施加一个幅值小于矫顽场的脉冲电场，在PZT中获得了两种可逆的稳定的电压脉冲感应机械应变状态，从而导致了可逆的电压脉冲感应双磁化翻转。这些电压脉冲在多铁性异质结构中诱导的双磁化翻转提供了一种有前途的方法，以功率有效的双磁化翻转，这对于信息存储至关重要。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.3698363]
We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698363]