A 20 nW +0.8°C/-0.8°C Inaccuracy (3σ) Leakage-Based CMOS Temperature Sensor With Supply Sensitivity of 0.9°C/V
A 20 nW +0.8°C/-0.8°C Inaccuracy (3σ) Leakage-Based CMOS Temperature Sensor With Supply Sensitivity of 0.9°C/V
复制标题
DOI：
10.1109/tcsi.2023.3276196
复制
发表时间：
2023-08
期刊：
影响因子：
--
通讯作者：
Jing Li;Bowen Yao;Lin Fan;Tianci Zhang;Yixin Zhang;Kejun Wu;Zhong Zhang;Qihui Zhang;Yan Wang;N. Ning;Qi Yu
中科院分区：
文献类型：
--
作者：
Jing Li;Bowen Yao;Lin Fan;Tianci Zhang;Yixin Zhang;Kejun Wu;Zhong Zhang;Qihui Zhang;Yan Wang;N. Ning;Qi Yu
This paper presents a subthreshold-leakage-current-based fully CMOS temperature-to-digital converter with high accuracy and supply rejection. The subthreshold current ratio is constructed by different channel lengths of the same MOSFET type, providing high accuracy and less corner dependence. In addition, the supply sensitivity is enhanced by the proposed subthreshold-leakage-current-based sensing element (SE) and the frequency ratio of two identical currents to frequency converters (CFCs). The prototype was implemented in a 180nm CMOS process. It achieves an inaccuracy of ±0.8°C ( $3\sigma$ ) from 0°C to 100°C after two-point calibration with a resolution of 120mK. Over a wide supply range from 0.8V to 1.6V, the temperature sensor shows a supply sensitivity of 0.9°/V at 30°C. Over the temperature range of 0–100°C, the power supply sensitivity is smaller than 3.4°C/V. Operating at 1V, the sensor has a power consumption of 20nW at 30°C, leading to an FoM of 14.4 pJ $\cdot \text{K}^{2}$ .
