Pulse-induced resistive and capacitive switching in TiO2 thin film devices
Pulse-induced resistive and capacitive switching in TiO2 thin film devices
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DOI：
10.1063/1.4840316
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发表时间：
2013-12
影响因子：
4
通讯作者：
I. Salaoru;A. Khiat;Qingjiang Li;R. Berdan;T. Prodromakis
中科院分区：
文献类型：
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作者：
I. Salaoru;A. Khiat;Qingjiang Li;R. Berdan;T. Prodromakis
在这项研究中，我们利用非过零的电流-电压特性所表现出的纳米二氧化钛基固态忆阻器。我们证明，这种两端器件的有效电阻和电容可以同时调制适当的电压脉冲。我们的研究结果证明，电阻和电容开关自然出现在纳米级Pt/TiO 2/Pt器件下的外部偏压，这种行为是由形成/破坏的导电丝通过TiO 2薄膜。
In this study, we exploit the non-zero crossing current–voltage characteristics exhibited by nanoscale TiO2 based solid-state memristors. We demonstrate that the effective resistance and capacitance of such two terminal devices can be modulated simultaneously by appropriate voltage pulsing. Our results prove that both resistive and capacitive switching arise naturally in nanoscale Pt/TiO2/Pt devices under an external bias, this behaviour being governed by the formation/disruption of conductive filaments through the TiO2 thin film.