Application of HfSiON as a gate dielectric material
Application of HfSiON as a gate dielectric material
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DOI：
10.1063/1.1476397
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发表时间：
2002-04
影响因子：
4
通讯作者：
M. Visokay;J. J. Chambers-J.;A. Rotondaro;A. Shanware;L. Colombo
中科院分区：
文献类型：
--
作者：
M. Visokay;J. J. Chambers-J.;A. Rotondaro;A. Shanware;L. Colombo
据报道，HfSiON 的物理和电学特性使其成为标准金属氧化物半导体流程中栅极电介质的理想材料。使用溅射沉积的薄膜具有最小的低介电常数界面层、低于 13 A 的等效氧化物厚度以及比 SiO2 低至少两个数量级的漏电流密度。薄膜中氮的存在增强了相对于 HfSiO 的热稳定性，并且在高达 1100 °C 的退火温度下没有观察到结晶。
Physical and electrical properties of HfSiON that make this material desirable as the gate dielectric in a standard metal–oxide–semiconductor flow are reported. Sputtering was used to deposit films with minimal low dielectric constant interface layers, equivalent oxide thicknesses below 13 A, and leakage current density at least two orders of magnitude lower than SiO2. The presence of nitrogen in the film enhances the thermal stability relative to HfSiO, and no crystallization was observed for anneals up to 1100 °C.