The dynamics of photoexcited carriers in microcrystalline silicon
The dynamics of photoexcited carriers in microcrystalline silicon
复制标题
微晶硅中光生载流子的动力学
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
Kazunobu Tanaka
中科院分区：
文献类型：
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作者：
S. Komuro;Y. Aoyagi;Y. Segawa;S. Namba;A. Masuyama;A. Matsuda;Kazunobu Tanaka
用瞬态光栅法观察了未掺杂微晶硅（μ c-Si）中光激发载流子的扩散系数和寿命随体积分数和晶粒尺寸的变化，并讨论了光激发载流子的动力学.在晶粒尺寸不变的条件下，当体积分数大于0.2时，寿命随体积分数的增加而减小，而扩散系数随体积分数的增加而增大。寿命的依赖性很好地解释了在晶界区的载流子复合。扩散系数和暗电导率的依赖关系解释了一个渗流过程。
Dependences of the diffusion coefficient and the lifetime of photoexcited carriers in undoped microcrystalline silicon ( μc‐Si) on the volume fraction and the grain size were observed by a transient grating method and the dynamics of photexcited carriers is discussed. Under the condition of a constant grain size, the lifetime decreases with the increase of the volume fraction but the diffusion coefficient increases with the increase of the volume fraction for any fraction larger than 0.2. The dependence of the lifetime was explained well by a carrier recombination at grain boundary regions. The dependences of the diffusion coefficient and the dark conductivity were interpreted by a percolation process.