Improvement of m-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition
Improvement of m-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition
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DOI：
10.1002/pssa.201600603
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发表时间：
2016-06
期刊：
影响因子：
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通讯作者：
H. Tanoue;T. Yamashita;S. Wada;Zenji Yatabe;S. Nagaoka;Yusui Nakamura
中科院分区：
文献类型：
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作者：
H. Tanoue;T. Yamashita;S. Wada;Zenji Yatabe;S. Nagaoka;Yusui Nakamura
通过在蓝宝石衬底上引入ZnO缓冲层，提高了雾化CVD法生长的ZnO薄膜的晶体质量。ZnO薄膜生长的高速旋转型雾化CVD与ZnCl2水溶液，它提供了均匀的外延层超过2英寸的晶片。作为缓冲层，需要形成小晶粒。因此，我们尝试使用Zn（CH3COO）2水溶液生长ZnO缓冲层，其提供约100nm的小晶粒尺寸。采用该缓冲层后，ZnO薄膜的X射线ω-摇摆曲线的半高宽由0.69 °减小到0.38 °，晶体质量得到改善。
Crystal quality of ZnO films grown by mist-CVD were improved by introducing ZnO buffer layers on sapphire substrates. The ZnO films were grown by high-speed rotation-type mist-CVD with ZnCl2 aqueous solution, which provided uniform epitaxial layers over 2-inch wafers. As a buffer layer, it is necessary to form small grains of crystal. Therefore, we attempted to grow the ZnO buffer layers using Zn(CH3COO)2 aqueous solution, which provide a small grain size of about 100nm. By using of this buffer layer, full width at half maximum of an X-ray ω-rocking curve for ZnO film was reduced from 0.69° to 0.38°, showing improvement of the crystal quality.