Linescan Lattice Microscopy: A Technique for the Accurate Measurement and Mapping of Lattice Spacing and Strain with Atomic Force Microscopy
Linescan Lattice Microscopy: A Technique for the Accurate Measurement and Mapping of Lattice Spacing and Strain with Atomic Force Microscopy
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DOI：
10.1021/acs.langmuir.1c01019
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发表时间：
2021-07-13
期刊：
影响因子：
3.9
通讯作者：
Carpick，Robert W.
中科院分区：
文献类型：
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作者：
McClimon，J. Brandon;Milne，Zac;Carpick，Robert W.
由于非线性、磁滞和蠕变等现象，压电扫描元件的非理想性限制了扫描探针显微镜的横向分辨率和精度。通过利用接触模式原子力显微镜中成熟的原子尺度粘滑现象，我们开发了一种仅使用单向线扫描数据的傅立叶分析来同时索引和测量表面原子晶格间距的方法。该技术的第一步是使用粘滑行为本身来校准 X 压电响应。这使得横向校准在 2.5 nm 和 9 μm 之间的误差优于 1%，而无需使用校准光栅。以这种方式在 NaCl(001) 晶体表面上演示了晶格索引和晶格常数测定。压电校准后，天然块状 MoS2(0001) 表面上的晶格常数测量结果显示误差优于 0.2%。它用于测量化学气相沉积 (CVD) 生长的单层 MoS2 的不均匀热失配应变，小至 0.5%。使用大块高取向热解石墨 (HOPG) 和 MoS2 作为参考材料，开发并演示了一种晶格间距空间映射技术，绝对精度优于 0.2%，相对精度优于 0.1%，在 12.5 × 12.5 nm2 像素的图中。
Lateral resolution and accuracy in scanning probe microscopies are limited by the nonideality of piezoelectric scanning elements due to phenomena including nonlinearity, hysteresis, and creep. By taking advantage of the well-established atomic-scale stick-slip phenomenon in contact-mode atomic force microscopy, we have developed a method for simultaneously indexing and measuring the spacing of surface atomic lattices using only Fourier analysis of unidirectional linescan data. The first step of the technique is to calibrate the X-piezo response using the stick-slip behavior itself. This permits lateral calibration to better than 1% error between 2.5 nm and 9 μm, without the use of calibration gratings. Lattice indexing and lattice constant determination are demonstrated in this way on the NaCl(001) crystal surface. After piezo calibration, lattice constant measurement on a natural bulk MoS2(0001) surface is demonstrated with better than 0.2% error. This is used to measure nonuniform thermal mismatch strain for chemical vapor deposition (CVD)-grown monolayer MoS2as small as 0.5%. A spatial mapping technique for the lattice spacing is developed and demonstrated, with absolute accuracy better than 0.2% and relative accuracy better than 0.1%, within a map of 12.5 × 12.5 nm2pixels using bulk highly oriented pyrolytic graphite (HOPG) and MoS2as reference materials.