Hard X-ray photoemission spectroscopy of the intrinsic correlated electronic structure of CrO_2

Hard X-ray photoemission spectroscopy of the intrinsic correlated electronic structure of CrO_2
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CrO_2本征相关电子结构的硬X射线光电子能谱

DOI：
10.1103/physrevb.87.235138
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发表时间：
2013
期刊：
Phys. Rev. B
影响因子：
--
通讯作者：
M. Donath and S. Suga(最終著者他9名)
M. Donath and S. Suga(最終著者他9名)
中科院分区：
--
文献类型：
--
作者：
M. Sperlich;C. König;G. Güntherodt;A. Shigemoto;M. Donath and S. Suga(最終著者他9名)

文献摘要

相似文献

体敏硬X射线光电子能谱（HAXPES）显示，半金属铁磁CrO（100）外延膜在Cr2核能级上具有明显的屏蔽特征，在O 1核能级上具有不对称性.这提供了有限的金属型费米边缘的证据，令人惊讶的是，在HAXPES中没有观察到。HAXPES中的光谱权重移动到费米能量以下归因于由于高能光电子引起的单离子反冲效应。结合逆PES的内在相关的莫特-哈伯德型电子结构被解开，产生平均库仑相关能量为3.2 eV。
Bulk-sensitive hard x-ray photoemission spectroscopy (HAXPES) reveals for as-grown epitaxial films of half-metallic ferromagnetic CrO(100) a pronounced screening feature in the Cr 2core level and an asymmetry in the O 1core level. This gives evidence of a finite, metal-type Fermi edge, which is surprisingly not observed in HAXPES. A spectral weight shift in HAXPES to below the Fermi energy is attributed to single-ion recoil effects due to high-energy photoelectrons. In conjunction with inverse PES the intrinsic correlated Mott-Hubbard-type electronic structure is unraveled, yielding an averaged Coulomb correlation energy≅ 3.2 eV.