HIGHLY STABLE SILYL RADICALS (ETNME3-NSI)3SI. (N = 1-3)
HIGHLY STABLE SILYL RADICALS (ETNME3-NSI)3SI. (N = 1-3)
复制标题
高度稳定的甲硅烷基 (ETNME3-NSI)3SI。
DOI：
10.1021/om970607x
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发表时间：
1997
期刊：
影响因子：
2.8
通讯作者：
H. Matsumoto
中科院分区：
文献类型：
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作者：
S. Kyushin;H. Sakurai;T. Betsuyaku;H. Matsumoto
甲硅烷基（EtnMe3-nSi）3Si·（1，n = 1; 2，n = 2; 3，n = 3）通过从（EtnMe3-nSi）3SiH（4，n = 1; 5，n = 2; 6，n = 3）与过氧化二叔丁基并通过光解（EtnMe3-nSi）4Si（7，n = 1; 8，n = 2; 9，n = 3）和（EtnMe3-nSi）3SiSi（SiMe3-nEtn）3（10，n = 1; 11，n = 2; 12，n = 3），并通过ESR光谱观察。这些甲硅烷基自由基在室温下相当稳定; 10 − 12生成的1、2和3的半衰期在15 ° C下分别为3小时、1天和1.5个月。
Silyl radicals (EtnMe3-nSi)3Si• (1, n = 1; 2, n = 2; 3, n = 3) were generated by hydrogen abstraction from (EtnMe3-nSi)3SiH (4, n = 1; 5, n = 2; 6, n = 3) with di-tert-butyl peroxide and by photolysis of (EtnMe3-nSi)4Si (7, n = 1; 8, n = 2; 9, n = 3) and (EtnMe3-nSi)3SiSi(SiMe3-nEtn)3 (10, n = 1; 11, n = 2; 12, n = 3) and observed by ESR spectroscopy. These silyl radicals are considerably stable at room temperature; the half-lives of 1, 2, and 3 generated from 10−12 are 3 h, 1 day, and 1.5 months at 15 °C, respectively.