A review of the optical band gap of thin film CdSxTe1−x
A review of the optical band gap of thin film CdSxTe1−x
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DOI：
10.1016/j.solmat.2005.07.003
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发表时间：
2006-05
影响因子：
6.9
通讯作者：
D. Lane
中科院分区：
文献类型：
--
作者：
D. Lane
先前发表的薄膜 CdSxTe1−x 的光学带隙 (Eg) 数据已被审查并合并在荟萃分析中，为弯曲方程 Eg(x)=E0+(E1-E0-b)x+bx2 提供一组新参数。对来自九份出版物的 125 个数据点进行非线性最小二乘拟合，得到 E0=1.54±0.01eV、E1=2.36±0.02eV 和 b=1.88±0.07eV。分析仅基于通过物理气相沉积生长的薄膜的已发表数据，并且没有观察到对沉积源性质的统计显着依赖性。将结果与已发布的丝网印刷 CdS/CdTe 层数据进行比较。
Previously published data for the optical band gap (Eg) of thin film CdSxTe1−xhas been reviewed and combined in a meta-analysis to provide a new set of parameters for the bowing equation Eg(x)=E0+(E1-E0-b)x+bx2. A non-linear least squares fit to 125 data points from nine publications gave E0=1.54±0.01eV, E1=2.36±0.02eV and b=1.88±0.07eV. Analysis was based only on published data for thin films grown by physical vapour deposition, and no statistically significant dependence on the nature of the deposition source was observed. The results are compared to published data for screen-printed CdS/CdTe layers.