Low Temperature High Electron Mobility in In0.75Ga0.25As/In0.75Al0.25As Modulation-Doped Hetrostructures Grown on GaAs Substrate
Low Temperature High Electron Mobility in In0.75Ga0.25As/In0.75Al0.25As Modulation-Doped Hetrostructures Grown on GaAs Substrate
复制标题
GaAs 衬底上生长的 In0.75Ga0.25As/In0.75Al0.25As 调制掺杂异质结构的低温高电子迁移率
DOI：
10.1143/jjap.37.l1501
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发表时间：
1998
影响因子：
1.5
通讯作者：
S. Yamada
中科院分区：
文献类型：
--
作者：
S. Gozu;Chulun Hong;S. Yamada
利用分子束外延技术，通过InAlAs阶梯缓冲层，在GaAs衬底上生长了In_（0.75）Ga_（0.25）As/In_（0.75）Al_（0.25）As调制掺杂异质结，在77和4.2K下获得了175，000和397，000 cm ~ 2/V·s的电子迁移率，这是该材料系统中迄今为止所报道的最高值。与同样生长的In 0.75Ga 0.25As/In 0.66A 0.34As和In 0.5Ga 0.5As/In 0.5Al 0.5As异质结构的结果比较，可以得出结论：由于在无应变界面条件下减少了合金散射和减少了电子有效质量（远红外测量为0.040m0），获得了高的迁移率。
We have grown In0.75Ga0.25As/In0.75Al0.25As modulation-doped hetrostructure on GaAs substrate via InAlAs step-graded buffer by molecular beam epitaxy and obtained electron mobilities of 175,000 and 397,000 cm2/V·s at 77 and 4.2 K respectively, those of which are the highest ones ever reported in this materials system. Comparing the results with those of In0.75Ga0.25As/In0.66A0.34As and In0.5Ga0.5As/In0.5Al0.5As heterostructures grown similarly, it is concluded that the high mobility was attained due to the reduced alloy scattering under the strain-free interface condition and to the reduced electron effective mass (0.040m0 from far-infrared measurement).