Design for Reliability of Low-voltage, Switched-capacitor Circuits
Design for Reliability of Low-voltage, Switched-capacitor Circuits
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低压开关电容器电路的可靠性设计
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发表时间：
1999
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通讯作者：
A. Abo
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作者：
A. Abo
由加州大学伯克利分校工程哲学博士Andrew Masami Abo教授Paul R.Gray主持的低压开关电容电路的可靠性设计模拟、开关电容电路在混合信号、模数接口中发挥着关键作用。它们实现了一大类功能，如采样、过滤和数字化。此外，它们的实现使其适合在兼容的低成本技术中与复杂的数字信号处理块集成--尤其是在CMOS中。即使越来越多的信号处理是在数字领域完成的，这种关键的模数接口也是基本必要的。一些集成应用的例子包括摄像机、无线局域网收发器、数字机顶盒等。然而，随着cmos技术的进步，集成电路的工作电压越来越低。随着器件尺寸的缩小，施加的电压将需要按比例调整，以保证长期可靠性和管理功率密度。该技术的可靠性约束要求模拟电路在与数字电路相同的低电压下工作。此外，在实现低电压运行时，不能违反技术的可靠性约束。这项工作研究了CMOS工艺的电压限制，以及模拟电路如何在不降低可靠性的情况下最大限度地提高MOS器件的效用。
Design for Reliability of Low-voltage, Switched-capacitor Circuits by Andrew Masami Abo Doctor of Philosophy in Engineering University of California, Berkeley Professor Paul R. Gray, Chair Analog, switched-capacitor circuits play a critical role in mixed-signal, analogto-digital interfaces. They implement a large class of functions, such as sampling, filtering, and digitization. Furthermore, their implementation makes them suitable for integration with complex, digital-signal-processing blocks in a compatible, low-cost technology–particularly CMOS. Even as an increasingly larger amount of signal processing is done in the digital domain, this critical, analogto-digital interface is fundamentally necessary. Examples of some integrated applications include camcorders, wireless LAN transceivers, digital set-top boxes, and others. Advances in CMOS technology, however, are driving the operating voltage of integrated circuits increasingly lower. As device dimensions shrink, the applied voltages will need to be proportionately scaled in order to guarantee long-term reliability and manage power density. The reliability constraints of the technology dictate that the analog circuitry operate at the same low voltage as the digital circuitry. Furthermore, in achieving low-voltage operation, the reliability constraints of the technology must not be violated. This work examines the voltage limitations of CMOS technology and how analog circuits can maximize the utility of MOS devices without degrading relia-