Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors
Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors
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DOI：
10.1063/1.4801762
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发表时间：
2013-04-08
影响因子：
4
通讯作者：
Jang, Jin
中科院分区：
文献类型：
--
作者：
Chowdhury, Md Delwar Hossain;Migliorato, Piero;Jang, Jin
我们研究了负偏压在光照应力和恢复下的温度依赖性。的转移特性表现出非刚性移向负栅极电压。对于应力和恢复，深耗尽的电压漂移是积累的两倍。结果支持了我们先前提出的机制，即双施主的产生和退火，可能是氧空位。应力和恢复的时间依赖性可以拟合到拉伸指数。这两个过程是热激活的激活能为1.06 eV和1.25 eV的应力和恢复，分别。提出了一个势能图来解释结果。(C)2013 AIP Publishing LLC.
We have investigated the temperature dependence of negative bias under illumination stress and recovery. The transfer characteristics exhibits a non-rigid shift towards negative gate voltages. For both stress and recovery, the voltage shift in deep depletion is twice that in accumulation. The results support the mechanism we previously proposed, which is creation and annealing of a double donor, likely to be an oxygen vacancy. The time dependence of stress and recovery can be fitted to stretched exponentials. Both processes are thermally activated with activation energies 1.06 eV and 1.25 eV for stress and recovery, respectively. A potential energy diagram is proposed to explain the results. (C) 2013 AIP Publishing LLC.