Wire-channel and wrap-around-gate metal–oxide–semiconductor field-effect transistors with a significant reduction of short channel effects
Wire-channel and wrap-around-gate metal–oxide–semiconductor field-effect transistors with a significant reduction of short channel effects
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线沟道和环绕栅极金属氧化物半导体场效应晶体管，显着减少短沟道效应
DOI：
10.1116/1.589729
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发表时间：
1997
影响因子：
1.4
通讯作者：
S. Chou
中科院分区：
文献类型：
--
作者：
E. Leobandung;Jian Gu;L. Guo;S. Chou
采用电子束光刻和反应离子刻蚀技术制备了金属氧化物半导体场效应晶体管（MOSFET）。最小的器件具有35 nm沟道宽度、50 nm沟道厚度和70 nm沟道长度。测量结果表明，随着WW MOSFET沟道宽度从75 nm减小到35 nm，短沟道效应显著减小：亚阈值斜率从356 mV/dec减小到80 mV/dec，漏致势垒降低从988 mV减小到129 mV。此外，沟道宽度的减小增加了每单位沟道宽度的驱动电流。本文讨论了一种具有大电流驱动能力的多沟道WW MOSFET。
Metal–oxide–semiconductor field-effect transistors (MOSFETs) with a wire-channel and wrap-around-gate (WW) structure were fabricated using electron beam lithography and reactive ion etching. The smallest devices have a 35 nm channel width, a 50 nm channel thickness, and a 70 nm channel length. Measurements showed that as the channel width of WW MOSFETs decreased from 75 to 35 nm short channel effects were significantly reduced: the subthreshold slope decreased from 356 to 80 mV/dec and the drain-induced barrier lowering decreased from 988 to 129 mV. Furthermore, the reduction of channel width increases the drive current per unit channel width. A multichannel WW MOSFET with a high current driving capability is discussed.