Nonlinear and Permanent Degradation of GaAs-Based Low-Noise Amplifier Under Electromagnetic Pulse Injection
Nonlinear and Permanent Degradation of GaAs-Based Low-Noise Amplifier Under Electromagnetic Pulse Injection
复制标题
电磁脉冲注入下 GaAs 基低噪声放大器的非线性和永久退化
DOI：
10.1109/temc.2018.2888520
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发表时间：
2020-02-01
影响因子：
2.1
通讯作者：
Wang, Peng
中科院分区：
文献类型：
--
作者：
Yu, Xinhai;Ma, Zhenyang;Wang, Peng
通过注入实验、失效分析和混合模式仿真研究了电磁脉冲（EMP）引起的L波段砷化镓低噪声放大器（LNA）非线性退化。实验结果表明，在电磁脉冲作用下，LNA样品的实时响应、射频特性和直流特性均表现出非线性和永久性的退化特征。详细地说，随着注入功率的增加，特性首先劣化，然后稍微恢复。此外，非线性退化表现出密切依赖于脉冲的属性。失效分析表明，LNA的退化是由于第一级高电子迁移率晶体管的栅极金属条下和周围的潜在失效缺陷，电磁脉冲诱导的“退火效应”很好地解释了LNA的恢复。仿真结果表明，当脉冲重复频率小于2.5kHz时，不会出现脉冲重复引起的热积累效应，脉冲宽度τ主要决定实际作用时间和“退火效应”的温度。基于上述机制，很好地解释了脉冲特性对非线性退化的依赖性。
Electromagnetic pulse (EMP)-induced nonlinear degradation of an L-band gallium arsenide-based low-noise amplifier (LNA) is studied by an injection experiment, failure analysis, and mixed-mode simulation. The experimental results indicate that the real-time response, radio frequency, and direct current characteristic of LNA samples under an EMP show nonlinear and permanent degradation features. In detail, the characteristics first degrade and then recover slightly as the injection power increases. In addition, the nonlinear degradation shows a close dependence on the pulse properties. Failure analysis reveals that the degradation of the LNA is attributed to latent failure defects under and around the gate metal strip of the first-stage high electron mobility transistor, with recovery well interpreted by an EMP-induced "annealing effect." Simulation results show that if the pulse repetition frequency is smaller than 2.5 kHz, a pulse repetition-induced thermal accumulation effect will not occur and that the pulsewidth tau will mainly determine the actual action duration and the temperature of the "annealing effect." Based on the above mechanism, the dependence of the pulse properties on nonlinear degradation is well explained.