Preparation of cubic boron nitride films by low pressure inductively coupled plasma enhanced chemical vapor deposition
Preparation of cubic boron nitride films by low pressure inductively coupled plasma enhanced chemical vapor deposition
复制标题
DOI：
10.1063/1.111001
复制
发表时间：
1994-02
影响因子：
4
通讯作者：
T. Ichiki;T. Yoshida
中科院分区：
文献类型：
--
作者：
T. Ichiki;T. Yoshida
通过低压电感耦合等离子体增强化学气相沉积（ICP-CVD）制备了立方氮化硼（c-BN）薄膜。通过在 1×10−3 Torr 下提供 7 kW 射频功率，在 38 mm 直径管内产生 13.56 MHz ICP。在 900 °C 的 B2H6+N2+He+Ar 系统中，薄膜沉积在 Si(100) 基底上。通过对生长表面进行适当的离子轰击，沉积晶粒尺寸小于 50 nm 的多晶 c-BN 薄膜。红外吸收光谱和电子衍射图都证实了氮化硼立方相的存在。这项工作中 c-BN 生长的最佳鞘电位为 80-86 V。
Cubic boron nitride (c‐BN) films have been prepared by low pressure inductively coupled plasma‐enhanced chemical vapor deposition (ICP‐CVD). 13.56 MHz ICP was generated inside a 38 mm diam tube by supplying 7 kW rf power at 1×10−3 Torr. Films were deposited on Si(100) substrates from the B2H6+N2+He+Ar system at 900 °C. Polycrystalline c‐BN films with the grain size less than 50 nm were deposited with the proper ion bombardment of the growing surface. The presence of cubic phase of boron nitride has been confirmed by both infrared absorption spectroscopy and electron diffraction patterns. The optimum sheath potential for c‐BN growth in this work was revealed to be 80–86 V.