Magnetron sputtering of Ti3SiC2 thin films,from a compound target
Magnetron sputtering of Ti3SiC2 thin films,from a compound target
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DOI：
10.1116/1.2757178
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发表时间：
2007-09-01
影响因子：
2.9
通讯作者：
Hultman, L.
中科院分区：
文献类型：
--
作者：
Eklund, P.;Beckers, M.;Hultman, L.
以Ti3SiC2和Ti为基体，采用磁控溅射法制备了Ti3SiC2薄膜。仅从Ti3SiC2靶上溅射就产生了C含量接近50 at的薄膜。%或更多，由于气相散射过程和从目标喷射的物种之间的角度和能量分布的差异。在Ti3SiC2靶的沉积通量中加入Ti，可以结合Ti3SiC2和Ti4SiC2共生的TiCx中过量的C。此外，亚化学计量TiC缓冲层可以作为碳汇，促进Ti3SiC2的生长。(c) 2007年美国真空学会。
Ti3SiC2 thin films were synthesized by magnetron sputtering from Ti3SiC2 and Ti targets. Sputtering from a Ti3SiC2 target alone resulted in films with a C content of similar to 50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3SiC2 target is shown to bind the excess C in TiCx intergrown with Ti3SiC2 and Ti4SiC2. Additionally, a substoichiometric TiC, buffer layer is shown to serve as a C sink and enable the growth of Ti3SiC2. (c) 2007 American Vacuum Society.