Effects of reaction temperature on properties of Cu2ZnSnSe4 nanoparticles
Effects of reaction temperature on properties of Cu2ZnSnSe4 nanoparticles
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DOI：
10.7567/jjap.56.06gh06
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发表时间：
2017-05
影响因子：
1.5
通讯作者：
Toshimasa Suzuki;Tsukasa Suzuki;S. Hori;K. Kawahara;S. Nonomura
中科院分区：
文献类型：
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作者：
Toshimasa Suzuki;Tsukasa Suzuki;S. Hori;K. Kawahara;S. Nonomura
Cu 2 ZnSnSe 4（CZTSe）已经用于光伏应用，因为其是直接p型半导体，具有报道的1.0- 1.5eV的光学带隙和高吸收系数。为了阐明反应温度对CZTSe纳米颗粒（NPs）光学性质的影响，我们通过一步溶液法在不同反应温度下制备了CZTSe纳米颗粒，并研究了所制备的NPs的光学性质。CZTSe纳米颗粒的直径约为。在150-300 °C下通过一步溶液工艺成功地制备了24 nm。所制备的CZTSe纳米颗粒的带隙根据反应温度而变化。带隙的变化将归因于取决于反应温度的组成和结晶度的变化。
Cu2ZnSnSe4 (CZTSe) has been used for photovoltaic applications owing to its being a direct p-type semiconductor with reported optical band gaps of 1.0–1.5 eV and a high absorption coefficient. To clarify the effects of the reaction temperature on the optical properties of CZTSe nanoparticles (NPs), we prepared CZTSe NPs by a one-step solution process at various reaction temperatures and investigated the optical properties of the prepared NPs. CZTSe NPs with a diameter of ca. 24 nm were successfully prepared at 150–300 °C by a one-step solution process. The band gap of the prepared CZTSe NPs varied depending on the reaction temperature. The change in the band gap would be attributed to the changes in the composition and crystallinity depending on the reaction temperature.