Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
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DOI：
10.1063/1.2789701
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发表时间：
2007-09-17
影响因子：
4
通讯作者：
Toriumi, Akira
中科院分区：
文献类型：
--
作者：
Nishimura, Tomonori;Kita, Koji;Toriumi, Akira
本文的目的是了解金属/锗（Ge）结的特性。在Ge上沉积了具有宽功函数范围的电极金属。所有的金属/p-Ge和金属/n-Ge结分别表现出欧姆特性和肖特基特性，具有很强的费米能级钉扎。在金属/Ge界面的电荷中性水平（CNL）是接近的分支点计算的体Ge。此外，钉扎水平几乎不调制通过在形成气体中退火，形成金属锗化物/Ge界面或改变衬底取向。这些结果表明，费米能级在金属/Ge界面的本质钉扎在CNL特征的金属感生的间隙态模型。(c)2007年，美国物理学会。
The purpose of this paper is to understand metal/germanium (Ge) junction characteristics. Electrode metals with a wide work function range were deposited on Ge. All metal/p-Ge and metal/n-Ge junctions have shown Ohmic and Schottky characteristics, respectively, with the strong Fermi-level pinning. The charge neutrality level (CNL) at metal/Ge interface is close to the branch point calculated for the bulk Ge. Moreover, the pinning level is hardly modulated by annealing in forming gas, forming metal-germanide/Ge interfaces or changing the substrate orientation. These results suggest that Fermi level at metal/Ge interface is intrinsically pinned at the CNL characterized by the metal-induced gap states model. (c) 2007 American Institute of Physics.