Proximity-effect-induced superconducting phase in the topological insulator Bi2Se3
Proximity-effect-induced superconducting phase in the topological insulator Bi2Se3
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拓扑绝缘体 Bi2Se3 中邻近效应诱导的超导相
DOI：
10.1103/physrevb.86.134504
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发表时间：
2012-10-02
影响因子：
3.7
通讯作者：
Lu, Li
中科院分区：
文献类型：
--
作者：
Yang, Fan;Qu, Fanming;Lu, Li
我们研究了拓扑绝缘体材料Bi_2Se_3在超导Pb-Bi_2Se_3界面附近的电子输运性质，发现Bi_2Se_3在扩展的体积内诱导出超导态.这种状态可以携带约瑟夫森超电流，并在正常金属电极探测的电导谱中显示出类似间隙的结构。差距的建立不是通过将电子限制在靠近超导体-正常金属界面的狭窄空间中，如先前在其他系统中观察到的，而是可能通过Bi 2Se 3中的电子-电子吸引相互作用。
We have studied the electron transport properties of topological insulator-related material Bi2Se3 near the superconducting Pb-Bi2Se3 interface, and found that a superconducting state is induced over an extended volume in Bi2Se3. This state can carry a Josephson supercurrent, and demonstrates a gaplike structure in the conductance spectra as probed by a normal-metal electrode. The establishment of the gap is not by confining the electrons into a narrow space close to the superconductor-normal metal interface, as previously observed in other systems, but presumably via electron-electron attractive interaction in Bi2Se3.