Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor
Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor
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DOI：
10.1016/s0257-8972(98)00781-6
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发表时间：
1999-03
期刊：
影响因子：
2.1
通讯作者：
S. Yun;Hong-young Chang;Min‐Sung Kang;C. Choi
中科院分区：
文献类型：
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作者：
S. Yun;Hong-young Chang;Min‐Sung Kang;C. Choi
采用三乙氧基氟硅烷（FTES）和氧气混合气体在螺旋等离子体反应器中沉积了低介电常数CF/SiOF复合薄膜。利用光发射光谱（OES）研究了自由基相对密度与薄膜性能的关系。OES数据表明，在900 W以上的RF功率下，FTES和O2气体被极大地解离。因此，螺旋等离子体CVD的沉积过程中，高度离解的源气体形成CF/SiOF复合膜不同于热CVD，其中气体在衬底上发生化学反应并形成SiOF膜。FTIR和XPS分析表明，薄膜中存在Si-F、Si-O和C-F键。Si-F键和C-F键的存在可以大大降低介电常数。随着O2/FTES比率降低，氟浓度增加并且介电常数降低。
Low dielectric constant CF/SiOF composite films are deposited using tri-ethoxy-fluorosilane (FTES) and O2mixture in a helicon plasma reactor without intentional heating or biasing the substrate. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The OES data imply that the FTES and O2gases are greatly dissociated above the RF power of 900 W. Consequently, the deposition process of helicon plasma CVD where the source gases dissociated highly form CF/SiOF composite film is different from thermal CVD where the gases react chemically on the substrate and make the SiOF film. FTIR and XPS spectra show that the film has Si–F, Si–O, and C–F bonds. The Si–F and C–F bonds may lower the dielectric constant greatly. As the O2/FTES ratio decreases, the fluorine concentration increases and the dielectric constant decreases.