Static compression of silicon in the [100] and in the [111] directions
Static compression of silicon in the [100] and in the [111] directions
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DOI：
10.1063/1.327714
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发表时间：
1980-02
影响因子：
3.2
通讯作者：
M. Gupta;A. Ruoff
中科院分区：
文献类型：
--
作者：
M. Gupta;A. Ruoff
高压是使用钻石压痕技术产生的。研究了高压下[100]方向加载硅和[111]方向加载硅的相变。从[100]方向加载的硅的电阻行为发现，它在大约12.0 GPa时变成了金属，这与以前报道的使用不同技术的硅的结果一致。然而，在较低的压力下，沿[111]方向加载的硅会变成金属。硅的转变对施加的应力类型高度敏感。
High pressures were generated using a diamond indentor technique. The phase transition in silicon loaded in the [100] direction and silicon loaded in the [111] direction under high pressure was studied. From the behavior of electrical resistance of silicon loaded in the [100] direction, it was found that it becomes metallic at about 12.0 GPa in agreement with the previously reported results on silicon using different techniques. However, silicon loaded in the [111] direction becomes metallic at a lower pressure. The silicon transition is highly sensitive to the type of stress applied.