Quantitative evaluation of local permittivity of semiconductor nanomaterials using microwave atomic force microscopy
Quantitative evaluation of local permittivity of semiconductor nanomaterials using microwave atomic force microscopy
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DOI：
10.1063/5.0049619
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发表时间：
2021-05
影响因子：
4
通讯作者：
Minji Zhao;Bo Tong;Y. Kimura;Yuhki Toku;Y. Morita;Y. Ju
中科院分区：
文献类型：
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作者：
Minji Zhao;Bo Tong;Y. Kimura;Yuhki Toku;Y. Morita;Y. Ju
本文报道了一种非接触式的半导体纳米材料介电常数的定量测量方法。利用微波原子力显微镜（M-AFM），在一次扫描过程中获得纳米材料的形貌和微波图像。利用M-AFM的非接触模式获得了ZnO、CuO纳米线和SnO 2纳米带的高空间分辨率形貌和微波图像。这些一维金属氧化物纳米材料的局部相对介电常数进行了定量评估。
In this paper, we report a non-contact and quantitative method to evaluate the permittivity of semiconductor nanomaterials. A microwave atomic force microscopy (M-AFM) was used to obtain the topography and microwave images of nanomaterials in one scanning process. Morphology and microwave images of ZnO and CuO nanowires, and SnO2 nanobelts with high spatial resolution were obtained in the non-contact mode of M-AFM. The local relative permittivity of these one-dimensional metal oxide nanomaterials was quantitatively evaluated.