Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and /spl delta/T/sub SOI/-induced scattering
Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and /spl delta/T/sub SOI/-induced scattering
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双栅和单栅超薄体 MOSFET 中载流子传输机制的实验研究 - 库仑散射、体积反转和 /spl delta/T/sub SOI/诱导散射
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
S. Takagi
中科院分区：
文献类型：
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作者：
Ken Uchida;J. Koga;S. Takagi
研究了单栅和双栅UTB MOSFET中的载流子输运机制。结果表明，UTB MOSFET中的库仑散射大于厚体MOSFET中的库仑散射。结果表明，在较高的NS区，4.3 nm体MOSFET中双栅结构的迁移率比单栅结构的小，这是由于SOI厚度涨落引起的散射所致。结果还表明，在双栅MOSFET中，库仑散射得到了很大的抑制。研究了亚1 nm体效应MOSFET的电学特性。
The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, the mobility of double-gate structures is smaller than that of single-gate structures in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated.