High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform
High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform
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DOI：
10.1364/prj.5.000702
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发表时间：
2017-12-01
影响因子：
7.6
通讯作者：
Tan, Chuan Seng
中科院分区：
文献类型：
--
作者：
Lin, Yiding;Lee, Kwang Hong;Tan, Chuan Seng
本文介绍了一种基于GOI平台的垂直入射p-i-n光电探测器。在GOI制备过程中，通过在Ge层的底部和顶部分别注入B和As，实现了垂直的p-i-n结构。在转移的高质量Ge层中验证了突变的掺杂分布。该光电探测器在-1V时的暗电流密度接近47 mA/cm(2)，在1550 nm处的光响应度为0.39A/W，与目前最先进的GOI光电探测器相比有了很大的提高。接近97%的内量子效率表明该器件具有优异的载流子收集效率。台面直径为60αm的光电探测器的3分贝带宽接近1 GHz，与理论计算符合较好。带宽有望提高到接近32 GHz，台面直径为10ae m。这项工作可以类似地扩展到具有其他中间层的GOI平台，并潜在地丰富GOI的功能多样性，用于近红外传感和与GE CMOS和中红外光子学集成的通信。(三)2017中国激光出版社
In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of similar to 47 mA/cm(2) at -1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of similar to 97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 alpha m exhibit a 3 dB bandwidth of similar to 1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to similar to 32 GHz with mesa diameter of 10 ae m. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics. (C) 2017 Chinese Laser Press