Construction of shallow surface states through light Ni doping for high-efficiency photocatalytic hydrogen production of CdS nanocrystals.
Construction of shallow surface states through light Ni doping for high-efficiency photocatalytic hydrogen production of CdS nanocrystals.
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DOI：
10.1002/chem.201302679
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发表时间：
2014-01
期刊：
影响因子：
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通讯作者：
Shuo Li;Lijing Zhang;Tengfei Jiang;Liping Chen;Yanhong Lin;Dejun Wang;T. Xie
中科院分区：
文献类型：
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作者：
Shuo Li;Lijing Zhang;Tengfei Jiang;Liping Chen;Yanhong Lin;Dejun Wang;T. Xie
通过简单的一步法合成了 Ni 掺杂 CdS 纳米线。 X射线衍射、X射线光电子能谱和光致发光光谱证实，轻掺杂Ni由于取代Ni离子的存在可以形成浅表面态，而重掺杂Ni由于间隙Ni离子的存在可以形成深表面态。表面光电压光谱和瞬态光电压测量表明，浅表面态可以延长光生载流子的寿命，而深表面态则导致光生载流子的复合。讨论了不同表面态与CdS纳米晶光催化性能之间的关系。由于轻掺杂镍，浅表面态密度的增强显着促进了光催化氢气的产生。
Ni-doped CdS nanowires were synthesized by a simple one-step method. X-ray diffraction, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy confirmed that light Ni doping can form shallow surface states due to the presence of substitutional Ni ions, and heavy Ni doping can form deep surface states due to the presence of interstitial Ni ions. Surface photovoltage spectroscopy and transient photovoltage measurements revealed that the shallow surface states can prolong the lifetime of the photogenerated charge carriers, whereas the deep surface states lead to recombination of the photogenerated charge carriers. The relationship between different surface states and the photocatalytic performance of CdS nanocrystals are discussed. The enhanced density of shallow surface states due to light Ni doping significantly promotes photocatalytic H2 production.