Superbroadband Near Infrared Emission from Bismuth Doped High-Silica Nanocrystalline Zeolites
Superbroadband Near Infrared Emission from Bismuth Doped High-Silica Nanocrystalline Zeolites
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2009
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In recent years, extensive studies on bismuth related superbroadband near-infrared photoluminescence (PL) have been carried out in traditional glass materials [16]. Concurrently, different authors tentatively assigned the NIR emission to the electronic transition of Bi, Bi, Bi, or to cluster of Bi atoms dispersed in glass host, and the final conclusion has not been made yet [16]. In comparison with the studies of Bi doped glasses, little attention has been paid on the investigation of Bi doped crystals [7]. It is well known that spectroscopy of active ions is much more understandable in crystals than in glasses because there is a definite majority of sites for doping ions in crystal. Therefore, finding a suitable crystal as the host of bismuth infrared-active (BiIRA) centres may pave the way for understanding the PL origin. Zeolites, as smart crystalline materials mainly consisting of [SiO4] and [AlO4] structure units, possess pore structures and these enable them to act as hosts for molecules and ions or as templates for nanostructures synthesis [8]. Recently, their potential as host materials for rare-earth ions has been evaluated [9]. However, the efficiency of the emitters is very small in the NIR region due to the fast relaxation of the excitation energy through nonradiative vibrational deactivation. Moreover, the obtained samples were not air-stable, which were usually kept in vacuum to avoid the adsorption of coordinated water [9]. Thus, it is an interesting topic to find a strategy to increase the NIR PL efficiency in active ions doped zeolites. In this Letter, we report efficient superbroadband near infrared emission in bismuth doped FAU-type nanocrystalline zeolites. This method consists of a simple ion-exchange process and subsequent hightemperature annealing under N2 atmospheric condition. We also demonstrate that the emission intensity and luminescence lifetime can be easily tailored by changing the annealing temperature. Based on the measurement of steady-state and time-resolved luminescence, we discussed the luminescence origin in detail.