Numerical analysis of capacitance compact models for organic thin-film transistors
Numerical analysis of capacitance compact models for organic thin-film transistors
复制标题
有机薄膜晶体管电容紧凑模型的数值分析
DOI：
10.1016/j.orgel.2014.04.013
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发表时间：
2014
影响因子：
3.2
通讯作者：
J. N. Burghartz
中科院分区：
文献类型：
--
作者：
S. Scheinert;T. Zaki;R. Rödel;I. Hörselmann;H. Klauk;J. N. Burghartz
导出了顶触点有机薄膜晶体管（OTFTs）中通道电容和门触点重叠电容的门电压依赖性解析表达式，并在有机紧凑电容模型中实现。用恒迁移率晶体管的实验数据对修正后的模型进行了验证。对具有电压相关迁移率的OTFTs进行了数值模拟分析。仿真结果表明，准静态模型能很好地描述模拟电容。累积起来，由于普遍接受的收费表模型假设，模型值被略微高估。在较低的载流子浓度下，准静态状态发生在较低的频率，因为迁移率降低。
Analytical expressions for the gate-voltage dependence of the channel capacitance and the gate-to-contacts overlap capacitances in top-contact organic thin-film transistors (OTFTs) are derived and implemented in an organic compact capacitance model. The resulting modified model is verified by experimental data of transistors with constant mobility. The same model is analyzed by numerical simulations for OTFTs with a voltage-dependent mobility. The simulation results indicate that the quasistatic model describes well the simulated capacitances. In accumulation, the modeled values are slightly overestimated because of the generally accepted assumption of the charge-sheet model. It is also demonstrated that the quasistatic regime occurs at lower frequencies because of the reduced mobility at lower charge carrier concentrations.