Classical and quantum routes to linear magnetoresistance
Classical and quantum routes to linear magnetoresistance
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DOI：
10.1038/nmat2259
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发表时间：
2008-09-01
期刊：
影响因子：
41.2
通讯作者：
Rosenbaum, T. F.
中科院分区：
文献类型：
--
作者：
Hu, Jingshi;Rosenbaum, T. F.
材料科学的标志是能够定制给定材料的微观结构以提供所需的响应。碳与铁的混合物提供了建筑物和桥梁的钢材;硅单晶中的杂质形成了电子革命的原材料;超导体中的钉扎中心使它们成为强大的磁铁。在这里，我们表明，无论是向锑化铟（一种众所周知的半导体）中添加百万分之几的适当化学杂质，还是在微米尺度上重新设计材料的结构，都可以改变其对外加磁场的响应。前一种方法纯粹是量子力学的（1-3）;后一种方法是无序的经典产物（4-7），变得有利。在这两种情况下，磁阻响应-磁传感器技术的核心-可以转换为一个简单的，大的和不饱和的磁场的线性函数。利用无序效应的进一步优点是，通过规避声子散射所施加的通常限制，将这种磁传感器的有用应用范围扩展到非常高的温度。
The hallmark of materials science is the ability to tailor the microstructure of a given material to provide a desired response. Carbon mixed with iron provides the steel of buildings and bridges; impurities sprinkled in silicon single crystals form the raw materials of the electronics revolution; pinning centres in superconductors let them become powerful magnets. Here, we show that either adding a few parts per million of the proper chemical impurities to indium antimonide, a well-known semiconductor, or redesigning the material's structure on the micrometre scale, can transform its response to an applied magnetic field. The former approach is purely quantum mechanical(1-3); the latter a classical outgrowth of disorder(4-7), turned to advantage. In both cases, the magnetoresistive response-at the heart of magnetic sensor technology-can be converted to a simple, large and linear function of field that does not saturate. Harnessing the effects of disorder has the further advantage of extending the useful applications range of such a magnetic sensor to very high temperatures by circumventing the usual limitations imposed by phonon scattering.