Reversible optical gate switching in Si wire waveguide integrated with Ge2Sb2Te5 thin film
Reversible optical gate switching in Si wire waveguide integrated with Ge2Sb2Te5 thin film
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DOI：
10.1049/el.2010.2538
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发表时间：
2010-10-14
影响因子：
1.1
通讯作者：
Tsuda, H.
中科院分区：
文献类型：
--
作者：
Ikuma, Y.;Shoji, Y.;Tsuda, H.
报道了一种包含薄Ge2Sb2Te5相变材料层的硅波导中的光门开关的可逆开关。用660 nm激光脉冲辐照Ge2Sb2Te5薄膜，在不破坏结构的情况下引发相变。从初始非晶态到晶态的转换时间为240 ns，从晶态到非晶态的转换时间为110 ns。在1525 ~ 1600 nm波长范围内，关闭和打开的最大消光比分别为5.7和2.5 dB。
Reversible switching of an optical gate switch in a Si waveguide including a thin Ge2Sb2Te5 phase-change material layer is reported. The phase-change was triggered by 660 nm laser pulse irradiation onto the Ge2Sb2Te5 layer with no structural damage. The switching time from the initial amorphous state to the crystalline state was 240 ns, and that from the crystalline state to the amorphous state was 110 ns. The maximum extinction ratios for switching-off and switching-on over the wavelength range from 1525 to 1600 nm were 5.7 and 2.5 dB, respectively.