A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current
A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current
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具有大驱动电流的陡坡MoS2/石墨烯狄拉克源场效应晶体管
DOI：
10.1021/acs.nanolett.0c04657
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发表时间：
2021-02-10
期刊：
影响因子：
10.8
通讯作者：
Zhou, Peng
中科院分区：
文献类型：
--
作者：
Tang, Zhaowu;Liu, Chunsen;Zhou, Peng
在连续的晶体管特征尺寸缩小中，由于亚阈值摆幅（SS）限制，电源电压的缩放是停滞的。需要一种具有新机制的晶体管来突破SS的超声波极限，同时保持大的驱动电流。在这里，通过采用最近提出的Dirac源极场效应晶体管（DSFET）技术，我们实验证明了二硫化钼/石墨烯（1.8 nm/0.3 nm）DSFET的第一次，和一个陡峭的SS为37.9 mV/dec在室温下观察到几乎自由滞后。此外，通过引入全包围栅（GAA）结构，MoS 2/石墨烯DSFET表现出33.5 mV/dec的更陡的SS和40%的增加的归一化驱动电流，高达52.7 A.mu m/（V-DS = 1 V），电流开/关比为10（8），这显示出低功率和高性能电子应用的潜力。
In the continuous transistor feature size scaling down, the scaling of the supply voltage is stagnant because of the subthreshold swing (SS) limit. A transistor with a new mechanism is needed to break through the thermionic limit of SS and hold the large drive current at the same time. Here, by adopting the recently proposed Dirac-source field-effect transistor (DSFET) technology, we experimentally demonstrate a MoS2/graphene (1.8 nm/0.3 nm) DSFET for the first time, and a steep SS of 37.9 mV/dec at room temperature with nearly free hysteresis is observed. Besides, by bringing in the structure of gate-all-around (GAA), the MoS2/graphene DSFET exhibits a steeper SS of 33.5 mV/dec and a 40% increased normalized drive current up to 52.7 mu A.mu m/(V-DS = 1 V) with a current on/off ratio of 10(8), which shows potential for low-power and high-performance electronics applications.