Giant magnetoresistance in organic spin-valves
Giant magnetoresistance in organic spin-valves
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DOI：
10.1038/nature02325
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发表时间：
2004-02-26
期刊：
影响因子：
64.8
通讯作者：
Shi, J
中科院分区：
文献类型：
--
作者：
Xiong, ZH;Wu, D;Shi, J
自旋阀是磁性和非磁性（间隔物）材料的分层结构，其电阻取决于通过器件的电子的自旋状态，因此可以由外部磁场控制。金属自旋阀中巨磁电阻（1）和隧穿磁电阻（2）的发现，使磁记录和磁存储等应用领域发生了革命性的变化，并开创了自旋电子学的新领域（3）--“自旋电子学”。现在，人们正致力于将这些自旋相关效应扩展到半导体材料。但是，虽然在使用无机半导体的自旋注入和检测方面已经取得了值得注意的进展（4-6），但具有半导体间隔物的自旋阀器件尚未得到证实。π共轭有机半导体由于其相对强的电子-声子耦合（7）和大的自旋相干性（8），可以为半导体自旋电子学提供有希望的替代方法。在这里，我们报告的自旋极化载流子的注入，运输和检测使用有机半导体作为间隔层的自旋阀结构，产生低温巨磁阻效应高达40%。
A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance(1) and tunnelling magnetoresistance(2) in metallic spin valves have revolutionized applications such as magnetic recording and memory, and launched the new field of spin electronics(3) -'spintronics'. Intense research efforts are now devoted to extending these spin-dependent effects to semiconductor materials. But while there have been noteworthy advances in spin injection and detection using inorganic semiconductors(4-6), spin-valve devices with semiconducting spacers have not yet been demonstrated. pi-conjugated organic semiconductors may offer a promising alternative approach to semiconductor spintronics, by virtue of their relatively strong electron phonon coupling(7) and large spin coherence(8). Here we report the injection, transport and detection of spin-polarized carriers using an organic semiconductor as the spacer layer in a spin-valve structure, yielding low-temperature giant magnetoresistance effects as large as 40 per cent.