A chemical bonding model for the native oxides of the III–V compound semiconductors
A chemical bonding model for the native oxides of the III–V compound semiconductors
复制标题
III-V族化合物半导体天然氧化物的化学键模型
DOI：
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发表时间：
1981
期刊：
影响因子：
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通讯作者：
G. Lucovsky
中科院分区：
文献类型：
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作者：
G. Lucovsky
本文提出了与III-V型化合物半导体相关的天然氧化物相中局部原子序的化学键模型。我们回顾了在GaAs上形成的表面和大块氧化物的XPS研究，指出在这些研究中测量的核心位移有助于区分As和Ga原子的不同氧化态，但不能唯一地指定局部原子的几何形状。本文用一个一般模型讨论了二元氧化玻璃的局域原子序，该模型将两种阳离子的局域键的任何定性差异归因于它们的相对电负性差异。然后将该模型应用于III-V和II-VI半导体的天然氧化物，其中它作为讨论其局部原子结构的框架。最后，提出红外吸收光谱可以作为XPS研究的重要补充工具，从而为co的天然氧化物的局部原子结构提供明确的分配。
This paper presents a chemical bonding model for the local atomic order in the native oxide phases associated with the III–V compound semiconductors. We review XPS studies of surface and bulk oxides formed on GaAs, pointing out that the core shifts measured in these studies serve to distinguish between various oxidation states of the As and Ga atoms, but do not uniquely specify the local atomic geometries. Local atomic order in binary oxide glasses is discussed in terms of a general model which ascribes any qualitative differences in the local bonding of the two cationic species to the differences in their relative electronegativities. This model is then applied to the native oxides of both III–V and II–VI semiconductors, wherein it serves as a framework for a discussion of their local atomic structure. Finally, it is suggested that IR absorption spectroscopy can be an important tool in complementing XPS studies and thereby providing a definitive assignment of local atomic structure in native oxides of co...