Power cycling methods for SiC MOSFETs
Power cycling methods for SiC MOSFETs
复制标题
SiC MOSFET 的功率循环方法
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
J. Lutz
中科院分区：
文献类型：
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作者：
C. Herold;J. Sun;P. Seidel;L. Tinschert;J. Lutz
评价功率循环效果需要正确测量热阻过程。因此，准确的结温在线测量是必要的。对不同的测量和功率循环方法进行了评价。在低测量电流和足够的负栅压条件下测量SiC MOSFET体二极管pn结压降的方法是最合适的。此外，功率循环测试期间的功率损耗应在正向FET模式下在高正栅极电压下产生。否则，测试结果将不符合应用要求。
The evaluation of power cycling results needs correct measurement of the course of thermal resistance. Hence an accurate online measurement of the junction temperature is necessary. Different measurement and power cycling methods were evaluated. The method of measuring the voltage drop of the SiC MOSFET body diode pn-junction at low measurement current with sufficient negative gate-voltage was found most suitable one. In addition power losses during power cycling test should be generated in forward MOSFET-mode at high positive gate-voltage. Otherwise test results will not be application conform.