Energy effects on the sputtering yield of Si bombarded with gas cluster ion beams
Energy effects on the sputtering yield of Si bombarded with gas cluster ion beams
复制标题
DOI：
10.1063/1.3548384
复制
发表时间：
2011-01
期刊：
影响因子：
--
通讯作者：
K. Ichiki;S. Ninomiya;T. Seki;T. Aoki;J. Matsuo
中科院分区：
文献类型：
--
作者：
K. Ichiki;S. Ninomiya;T. Seki;T. Aoki;J. Matsuo
气体团簇离子表现出多种辐照效应，如高溅射产额。研究团簇离子束的最佳入射条件对表面改性技术的应用具有重要意义。在本研究中，探讨了入射能量与腔室气压对气体团簇离子轰击溅镀产额的影响。入射平均团簇尺寸为2000原子/离子，入射能量为10-80 keV。运输过程中与残余气体碰撞的次数在1-20次之间。气体团簇离子束溅射产额随团簇入射能量的增加而非线性增加。然而，团簇离子束容易与残余气体碰撞而损失能量，溅射产额迅速下降。为了有效地利用气体团簇离子束，传输过程沿着的碰撞频率应控制在几次以内。
Gas cluster ion presents various irradiation effects such as high sputtering yields. It is important to study the optimum condition of incident cluster ion beam for applications in surface modification technology. In this study, the effects of incident energy and chamber pressure on the sputtering yield with gas cluster ion bombardment were investigated. The incident mean cluster size was 2000 atoms/ion and incident energy was 10–80 keV. The number of collisions with residual gas during transportation was in the range 1–20. The sputtering yield with gas cluster ion beam increased nonlinearly with increasing incident cluster energy. However, cluster ion beam easily lose their energy by collision with residual gas, and the sputtering yield decreased rapidly. For using gas cluster ion beam efficiently, the collision frequency along transportation should be kept less than a few times.