On the origin of periodic surface structure of laser‐annealed semiconductors
On the origin of periodic surface structure of laser‐annealed semiconductors
复制标题
激光退火半导体周期性表面结构的起源
DOI：
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发表时间：
1978
期刊：
影响因子：
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通讯作者：
R. McFarlane
中科院分区：
文献类型：
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作者：
G. Maracas;G. Harris;C. A. Lee;R. McFarlane
报道了对激光辐照GaAs的观察，其中诱导的表面周期性现象与激光的同时振荡轴向模式之间的非线性相互作用有关。有人建议，在表面熔化和再生长的材料分布沿着节线的驻声波图案对应的轴向模式拍频。观察到的几种模式与光频的干涉效应不一致。
Observations on laser‐irradiated GaAs are reported in which the phenomenon of induced surface periodicity is related to a nonlinear interaction between simultaneously oscillating axial modes of the laser. It is suggested that during surface melting and regrowth material is distributed along nodal lines of a standing acoustic wave pattern corresponding to the axial mode beat frequencies. The several patterns observed are not consistent with an interference effect at optical frequencies.