Organic phototransistor based on poly(3-hexylthiophene)/TiO2 nanoparticle composite
Organic phototransistor based on poly(3-hexylthiophene)/TiO2 nanoparticle composite
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DOI：
10.1063/1.2957981
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发表时间：
2008-07-14
影响因子：
4
通讯作者：
Chan, Helen L. W.
中科院分区：
文献类型：
--
作者：
Mok, Sheung Man;Yan, Feng;Chan, Helen L. W.
研制了基于聚3-己基噻吩和纳米二氧化钛复合物的光敏光电晶体管。该器件在曝光条件下，沟道电流发生快速变化，这是由于阈值电压的正向漂移，而场效应迁移率和截止电流没有变化。阈值电压的偏移是由通道中的TiO 2纳米颗粒捕获的累积电子引起的。器件的光敏性取决于TiO 2纳米颗粒的浓度、入射波长和源漏之间的电压。(C)2008年美国物理学会。
Light sensitive phototransistor based on the composite of poly(3-hexylthiophene) and TiO2 nanoparticles has been developed. The device shows a quick change in channel current under light exposure, which can be attributed to a positive shift of the threshold voltage, while no change in the field effect mobility and off current can be observed. The shift of the threshold voltage is induced by accumulated electrons trapped by the TiO2 nanoparticles in the channel. The photosensitivity of the device has been found to be dependent on the concentration of TiO2 nanoparticles, the incident wavelength and the voltage between the source and drain. (C) 2008 American Institute of Physics.