Enhanced tunability performance of low temperature crystallized Pb0.4Sr0.6TiO3 thin films derived from distinct microstructure
Enhanced tunability performance of low temperature crystallized Pb0.4Sr0.6TiO3 thin films derived from distinct microstructure
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DOI：
10.1016/j.matlet.2013.06.058
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发表时间：
2013-09
影响因子：
3
通讯作者：
Kui Li;D. Remiens;Xianlin Dong;J. Costecalde;N. Sama;Xiuyun Lei;Li Tao;G. Du;Genshui Wang
中科院分区：
文献类型：
--
作者：
Kui Li;D. Remiens;Xianlin Dong;J. Costecalde;N. Sama;Xiuyun Lei;Li Tao;G. Du;Genshui Wang
这项研究提出了一种在 LaNiO3 缓冲的 SiO2/Si 基底上制备在相对较低温度下结晶的 Pb0.4Sr0.6TiO3 薄膜的新方法，该薄膜具有不同的微观结构和增强的可调性能。在异位射频磁控溅射过程中氧的掺入异常地改变了薄膜的微观结构，并由于在有电场和无电场的情况下调制介电常数而显着提高了可调谐性。介电响应与直流电场分析表明，随着氧含量的增加，可调谐性在±400 kV/cm下从61.6%增加到73.4%，而损耗因子保持相对较低，这表明该薄膜可能是与硅集成电路兼容的微波可调谐器件的有前途的候选者之一。
This investigation presents a novel method to prepare Pb0.4Sr0.6TiO3thin films crystallized at relatively low temperature with different microstructures and enhanced tunability performance on LaNiO3buffered SiO2/Si substrates. The incorporation of oxygen during the ex-situ RF magnetron sputtering unusually changes the microstructure of the films and remarkably improves the tunability because of the modulated dielectric constant with and without electric field. The dielectric response versus the DC electric field analysis revealed that the tunablity increased from 61.6% to 73.4% at ±400 kV/cm with increasing content of oxygen while the loss factor retained relatively low, suggesting the film could be one of the promising candidates for the microwave tunable devices compatible with Si integrated circuits.