Elementary surface processes during reactive magnetron sputtering of chromium
Elementary surface processes during reactive magnetron sputtering of chromium
复制标题
铬反应磁控溅射过程中的基本表面过程
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
A. Keudell
中科院分区：
文献类型：
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作者：
Sascha Monje;C. Corbella;A. Keudell
在束流实验中，利用Ar离子(400-800 eV)和氧原子和分子的定量通量，模拟了铬靶在反应等离子体中发生的基本表面过程。为此，采用高功率脉冲磁控溅射的方法在石英晶体微天平表面镀覆了一层铬薄膜。用流量平衡方程对测量的生长速率和刻蚀速率进行了拟合，得到复合相的溅射产额约为0.05，氧在裸铬表面的附着系数为0.38。进一步拟合的参数是氧离子注入效率和表面氧化位密度。在反应溅射的早期阶段，晶位密度增加了4倍，这是铬氧化的相关机制。这种离子增强的氧吸收可以归因于铬表面的粗化和氧原子在靶中更深处的碰撞注入。这项工作除了为控制氧化提供基础数据外。
The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O2 of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation ...