DIRECT MEASUREMENT OF REACTION-KINETICS FOR THE DECOMPOSITION OF ULTRATHIN OXIDE ON SI(001) USING SCANNING TUNNELING MICROSCOPY
DIRECT MEASUREMENT OF REACTION-KINETICS FOR THE DECOMPOSITION OF ULTRATHIN OXIDE ON SI(001) USING SCANNING TUNNELING MICROSCOPY
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DOI：
10.1103/physrevlett.69.339
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发表时间：
1992-07-13
影响因子：
8.6
通讯作者：
ENGEL, T
中科院分区：
文献类型：
--
作者：
JOHNSON, KE;ENGEL, T
研究了单层厚氧化膜在Si(001)衬底上的空间非均匀热分解。在部分脱附后，氧化层中形成了均匀分布的空洞。对孔洞面积分布随脱附程度变化的分析表明，空穴生长的速率决定步骤是在空穴内产生扩散的硅单体。这解释了硅衬底在单层氧气脱附时意外发生的实质性重排。
The spatially inhomogeneous thermal decomposition of monolayer thick oxide films on Si(001) has been investigated. After partial desorption, uniformly distributed voids are formed in the oxide layer. Analysis of the evolution in the void area distribution with extent of desorption suggests that the rate determining step in void growth is the creation of a diffusing Si monomer within the void. This explains the unexpected substantial rearrangement of the Si substrate upon desorption of a single monolayer of oxygen.