Relationship between 〈111〉-oriented Cu film and thin Ta–W–N barrier
Relationship between 〈111〉-oriented Cu film and thin Ta–W–N barrier
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〈111〉取向Cu薄膜与薄Ta-W-N势垒的关系
DOI：
10.35848/1347-4065/ab8e1e
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发表时间：
2020
影响因子：
1.5
通讯作者：
M. Yasuda
中科院分区：
文献类型：
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作者：
M. Takeyama;Masaru Sato;M. Yasuda
我们研究了一种Ta-W-N薄膜作为铜(111)取向的候选材料。很明显，5 nm厚的Ta-W-N薄膜导致了Cu(111)的高取向。这一机制很难理解，但通过引入一种高分辨率的测量系统来澄清。Ta-W-N薄膜为面心立方结构，晶格略有扩展，呈(111)择优取向，与Cu(111)晶格匹配。新证实了这一结果是由于Ta-W-N薄膜具有(111)择优取向和良好的晶格匹配。此外，Ta-W-N薄膜表现出良好的扩散阻挡性能，防止了铜的扩散。这些结果将对未来的金属化技术有一定的参考价值。
We examined a thin Ta–W–N film as an underlying material candidate for the Cu(111) orientation. It became clear that a 5-nm-thick Ta–W–N film leads to the high orientation of Cu(111). It was difficult to understand this mechanism, but it was clarified by introducing a measurement system with high resolution. The structure of the Ta–W–N film was based on fcc-TaN with a slightly expanded lattice and showed a (111) orientation, resulting in a lattice match with Cu(111). It is newly confirmed that this result is due to the thin Ta–W–N film having a (111) orientation and favorable lattice matching with Cu(111). Moreover, the Ta–W–N film showed good properties as a diffusion barrier for protecting against Cu diffusion. These results will be useful for future metallization technology.