Diode laser induced chemical vapor deposition of WSix on TiN from WF6 and SiH4
Diode laser induced chemical vapor deposition of WSix on TiN from WF6 and SiH4
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二极管激光诱导 WSix 化学气相沉积在 WF6 和 SiH4 的 TiN 上
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
M. Meunier
中科院分区：
文献类型：
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作者：
P. Desjardins;R. Izquierdo;M. Meunier
采用连续GaAlAs激光器阵列，以WF 6和SiH 4混合气体为原料，在TiN上沉积WSix，并研制了一套结构紧凑、成本低廉的激光直写系统。在静态反应器中以5 μm/s的速度沉积4 - 15 μm宽、110-950 nm厚的线。对于由1 Torr WF 6和3 Torr/SiH 4的气体混合物沉积的线，如通过俄歇电子能谱测量的，在存款的本体中的W/Si比在1.1和1.4之间。在动态反应器中，使用稀释在50-150 sccm Ar中的1 sccm WF 6和3 sccm SiH 4的流动气体混合物，以100 μm/s写入的线通常为4-12 μm宽和250-800 nm厚。在这种情况下，存款的主体中的W/Si比在1.5和1.8之间。当氩气流量增加时，厚度减小，这表明生长速率受到反应性物质的运输的限制，至少对于生长的一部分。还观察到沉积层的富钨顶表面，表明室温回火温度为100 ℃。
A compact and inexpensive laser direct writing system, using a continuous wave GaAlAs diode laser array emitting 1 W at λ=796 nm, has been developed for the deposition of WSix on TiN from a gas mixture of WF6 and SiH4. Lines 4 to 15 μm wide and 110–950 nm thick are deposited at 5 μm/s in a static reactor. The W/Si ratio in the bulk of the deposit, as measured by Auger electron spectroscopy, is between 1.1 and 1.4 for the lines deposited from a gas mixture of 1 Torr WF6 and 3 Torr/SiH4. In a dynamic reactor, with a flowing gas mixture of 1 sccm WF6 and 3 sccm SiH4 diluted in 50–150 sccm Ar, lines written at 100 μm/s are typically 4–12 μm wide and 250–800 nm thick. The W/Si ratio in the bulk of the deposit is between 1.5 and 1.8 in this case. Thickness decreases when the argon flow increases suggesting that the growth rate is limited by the transport of the reactive species, at least for a portion of the growth. A tungsten‐rich top surface of the deposited layer is also observed, indicating that room temper...