Correlation between the Cu‐related luminescent center and a deep level in silicon
Correlation between the Cu‐related luminescent center and a deep level in silicon
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Cu相关发光中心与硅深能级之间的相关性
DOI：
10.1063/1.359863
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发表时间：
1995
影响因子：
3.2
通讯作者：
K. Schmalz
中科院分区：
文献类型：
--
作者：
H. Erzgräber;K. Schmalz
使用深能级瞬态光谱 (DLTS) 和光致发光 (PL) 研究了 Ev+0.1 eV 的铜诱导深中心与发光铜中心的出现之间的相关性，从而产生了具有 1.014 eV 处最强 Cu00 无声子线的特征线谱。 0.1 eV 铜中心浓度范围为 1011 至约 1014 cm−3，是通过对浮区 p 型硅样品进行铜污染处理而无需淬火而获得的。 Cu00线强度对强度饱和过渡区域中激发功率的依赖性用于确定饱和强度ICusat，其代表发光铜中心的浓度。饱和强度以及发光铜中心的浓度显示出与 0.1 eV 深中心浓度的线性相关性，具有良好的相关性，表明 DLTS 和 PL 检测到相同的铜诱导中心。
The correlation between the copper‐induced deep centers with Ev+0.1 eV and the appearance of luminescent copper centers, leading to a characteristic line spectrum with the most intense Cu00 no‐phonon line at 1.014 eV, has been examined using deep level transient spectroscopy (DLTS) and photoluminescence (PL). Concentrations of the 0.1 eV copper centers ranging from 1011 to about 1014 cm−3 were obtained by a copper contamination treatment of floating zone p‐type silicon samples without quenching. The dependence of the Cu00 line intensity on the excitation power in the transition region to intensity saturation was used to determine the saturation intensity ICusat, which represents the concentration of luminescent copper centers. The saturation intensities and therefore also the concentrations of luminescent copper centers, show a linear dependence on the concentrations of the 0.1 eV deep centers with good correlation, suggesting that the same Cu‐induced centers are detected by DLTS and PL.