Theoretical investigation of dielectronic recombination of Sn12+ ions
Theoretical investigation of dielectronic recombination of Sn12+ ions
复制标题
Sn12离子双电子复合的理论研究
DOI：
10.1103/physreva.83.062708
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发表时间：
2011-06-21
影响因子：
2.9
通讯作者：
Wang, J. G.
中科院分区：
文献类型：
--
作者：
Fu, Y. B.;Dong, C. Z.;Wang, J. G.
用带组态相互作用的相对论柔性原子程序对Sn12+离子的双电子复合(DR)速率系数进行了理论计算。对4s、4p和4d亚壳激发的速率系数的比较表明，在整个温度范围内，4p亚壳激发占主导地位，低温4d亚壳激发和高温4s亚壳激发是不能忽略的。为了便于应用，计算的DR率系数被拟合成一个经验公式。当电子温度大于1 eV时，总DR率系数大于辐射复合系数或三体复合系数。因此，DR对激光产生的TiN等离子体的电离平衡有很大影响。
Theoretical calculations have been made for the dielectronic recombination (DR) rate coefficients of Sn12+ ion using a relativistic flexible atomic code with configuration interaction. Comparison of the rate coefficients for 4s, 4p, and 4d subshell excitation shows that while the 4p subshell excitation dominates over the whole temperature region, 4d subshell excitation at low temperature and 4s subshell excitation at high temperature cannot be neglected. In order to facilitate simple applications, the calculated DR rate coefficients are fitted to an empirical formula. The total DR rate coefficient is greater than either the radiative recombination or three-body recombination coefficients for electron temperatures greater than 1 eV. Therefore, DR can strongly influence the ionization balance of laser-produced tin plasmas.