Magnetic properties of SrTiO3-buffered Ba(Fe0.2Zr0.8)O3−δ films on Si(001) substrates
Magnetic properties of SrTiO3-buffered Ba(Fe0.2Zr0.8)O3−δ films on Si(001) substrates
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DOI：
10.1063/1.3059407
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发表时间：
2009-02
影响因子：
3.2
通讯作者：
H. Kanatani;H. Kume;T. Matsui
中科院分区：
文献类型：
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作者：
H. Kanatani;H. Kume;T. Matsui
采用脉冲激光束沉积法，以SrTiO3（STO）为缓冲层，在Si（001）衬底上制备了Ba（Fe0.2Zr0.8）O3−δ（BFZO）薄膜。X射线衍射的结果表明，STO缓冲层和BFZO薄膜具有多晶性质。STO缓冲的BFZO薄膜在室温下表现出铁磁磁滞回线，其饱和磁化强度是直接沉积在Si（001）衬底上的BFZO薄膜的3.3倍。STO缓冲BFZO薄膜部分外延生长的STO缓冲层的取向关系。使用软X射线辐射的X射线光电子能谱分析的结果表明，相对量的Fe 4+离子相当增加的STO缓冲的BFZO膜，而不是直接沉积在Si衬底上的BFZO膜。
Ba(Fe0.2Zr0.8)O3−δ (BFZO) films were synthesized on Si(001) substrates using SrTiO3 (STO) buffer layers by pulsed laser-beam deposition method. The results of the x-ray diffraction revealed that the STO buffer layers and the BFZO films had polycrystalline nature. The STO-buffered BFZO films showed ferromagnetic hysteresis loops at room temperature, and their saturation magnetization was 3.3 times as large as that of the BFZO films directly deposited on Si(001) substrates. The STO-buffered BFZO films partially grew epitaxially on the STO buffer layers with orientation relationships. The results of the x-ray photoelectron spectroscopy analysis using soft x-ray radiation indicated that the relative amount of the Fe4+ ions fairly increased for the STO-buffered BFZO films rather than for the BFZO films directly deposited on Si substrates.