Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing
Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing
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DOI：
10.1063/1.5045859
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发表时间：
2018-09
影响因子：
4
通讯作者：
M. Rühl;Ch. Ott;Stephan Götzinger;Michael Krieger;Heiko B. Weber
中科院分区：
文献类型：
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作者：
M. Rühl;Ch. Ott;Stephan Götzinger;Michael Krieger;Heiko B. Weber
报道了4H碳化硅(SIC)中色心的质子辐照和随后的退火产生和湮灭。利用低温光致发光(PL)研究了不同质子剂量和不同退火温度对光致发光光谱的影响。在已报道的缺陷特征中，我们观察到无处不在但尚未识别的发光特征，该特征由位于768.8 nm、812.0 nm和813.3 nm的三条尖锐且温度稳定的线(表示为TS1、2、3)组成。这些谱线在所有测量参数中都表现出很强的相关性，这表明它们属于同一微观缺陷。此外，在退火后观察到TS1、2、3谱线强度与初始注入剂量的明显关系，这表明潜在的缺陷与注入引起的本征缺陷有关。总的数据表明了一个连续的缺陷转变：质子辐照最初产生孤立的硅空位，这些空位被转化为反位空位复合体，这些空位复合体又被转化为可能与本征有关的缺陷，表现为TS1，2，3PL线。我们给出了控制产生这些色心的配方，并报道了4H碳化硅中色心的产生和湮灭的质子辐照和随后的退火法。利用低温光致发光(PL)研究了不同质子剂量和不同退火温度对光致发光光谱的影响。在已报道的缺陷特征中，我们观察到无处不在但尚未识别的发光特征，该特征由位于768.8 nm、812.0 nm和813.3 nm的三条尖锐且温度稳定的线(表示为TS1、2、3)组成。这些谱线在所有测量参数中都表现出很强的相关性，这表明它们属于同一微观缺陷。此外，在退火后观察到TS1、2、3谱线强度与初始注入剂量有明显的依赖关系，这表明潜在的缺陷与TS1、2、3谱线强度有关。
We report on the generation and annihilation of color centers in 4H silicon carbide (SiC) by proton irradiation and subsequent annealing. Using low-temperature photoluminescence (PL), we study the transformation of PL spectra for different proton doses and annealing temperatures. Among well reported defect signatures, we observe omnipresent but not yet identified PL signatures consisting of three sharp and temperature stable lines (denoted TS1,2,3) at 768.8 nm, 812.0 nm, and 813.3 nm. These lines show a strong correlation throughout all measurement parameters, suggesting that they belong to the same microscopic defect. Further, a clear dependence of the TS1,2,3 line intensities on the initial implantation dose is observed after annealing, indicating that the underlying defect is related to implantation induced intrinsic defects. The overall data suggest a sequential defect transformation: proton irradiation initially generates isolated silicon vacancies which are transformed into antisite vacancy complexes which are, in turn, transformed into presumably intrinsic-related defects, showing up as TS1,2,3 PL lines. We present recipes for the controlled generation of these color centers.We report on the generation and annihilation of color centers in 4H silicon carbide (SiC) by proton irradiation and subsequent annealing. Using low-temperature photoluminescence (PL), we study the transformation of PL spectra for different proton doses and annealing temperatures. Among well reported defect signatures, we observe omnipresent but not yet identified PL signatures consisting of three sharp and temperature stable lines (denoted TS1,2,3) at 768.8 nm, 812.0 nm, and 813.3 nm. These lines show a strong correlation throughout all measurement parameters, suggesting that they belong to the same microscopic defect. Further, a clear dependence of the TS1,2,3 line intensities on the initial implantation dose is observed after annealing, indicating that the underlying defect is related to ...