INFRARED ABSORPTION AND VALENCE BAND IN INDIUM ANTIMONIDE
INFRARED ABSORPTION AND VALENCE BAND IN INDIUM ANTIMONIDE
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DOI：
10.1103/physrev.119.613
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发表时间：
1960-01-01
期刊：
影响因子：
--
通讯作者：
FAN, HY
中科院分区：
文献类型：
--
作者：
GOBELI, GW;FAN, HY
在接近液氦温度下研究了各种载流子浓度的 n 型和 p 型简并样品的红外吸收。 p 型样品中光子能量大于能隙的吸收取决于空穴浓度。结果表明，价带发生扭曲，k=0 时的能量非常接近能带的最大能量。观察到 n 型样品的吸收阶跃，这给出了光孔有效质量的估计~ 0. 0 1 2 m。 p型样品中的长波长吸收是间隔带跃迁的特征。
Infrared absorption is studied at near liquid helium temperature for n-and p-type degenerate samples of various carrier concentrations. The absorption in p-type samples, at photon energies larger than the energy gap, depends on the hole concentration. The results show that the valence band is warped and that the energy at k= 0 is very close to the maximum energy of the band. A step in the absorption of n-type samples is observed which gives an estimate of∼ 0. 0 1 2 m for the effective mass of light holes. The long wavelength absorption in p-type samples is characteristic of intervalence band transitions.